Method for forming a capacitor

ABSTRACT

A capacitor and a method for forming a capacitor is described and which includes providing a node location to which electrical connection to a capacitor is to be made; providing an amorphous inner capacitor plate layer of a first material atop the node location; providing a capacitor dielectric layer outwardly of the first material; after providing the capacitor dielectric layer, rendering the first material to be polycrystalline; providing an electrically conductive outer capacitor plate layer outwardly of the capacitor dielectric layer; and providing the first material to be electrically conductive. The capacitor formed by the present method exhibits current leakage characteristics which are substantially symmetrical with respect to both positive and negative voltage bias and characterized by differences between the positive and negative voltage bias being within less than about 10 percent for a predetermined voltage.

TECHNICAL FIELD

This invention relates to capacitor construction and to methods forforming capacitors.

BACKGROUND OF THE INVENTION

The prior art is replete with numerous examples of capacitors which arefabricated to address various design criterion. For example, assemiconductor devices get smaller in size, designers are faced with amyriad of problems related to the production of capacitors whichmaintain sufficient capacitance in spite of the smaller size. As ageneral matter, capacitance can, on the one hand, be enhanced byincreasing the surface area of the capacitor dielectric layer; or on theother hand, by decreasing the capacitor dielectric layer thickness.

Heretofore designers of semiconductor devices have focused theirattention on increasing the outer surface area of the inner capacitorplate by means of depositing polysilicon which has a rough surfacetexture. Hemispherical grain polysilicon is often utilized for thispurpose. This increase in the outer surface area of the inner capacitorplate translates into increased capacitor dielectric surface area.

While the use of the technique, such as described above, has worked withsome degree of success, there are several aspects of this same and othertechniques which have detracted from their usefulness. For example, ascontact openings become smaller in size, the use of materials such ashemispherical grain polysilicon becomes less attractive because therough outer surface of such materials facilitates plugging or otherwiseoccluding smaller contact openings.

The method of the present invention is employed to address these andother problems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial, vertical, cross sectional view of a semiconductorwafer fragment at one processing step in accordance with the presentinvention.

FIG. 2 is a view of the FIG. 1 semiconductor wafer fragment at aprocessing step subsequent to that shown in FIG. 1.

FIG. 3 is a view of the FIG. 2 semiconductor wafer fragment at aprocessing step subsequent to that shown in FIG. 2.

FIG. 4 is a view of the FIG. 3 semiconductor wafer fragment at aprocessing step subsequent to that shown in FIG. 3.

FIG. 5 is a view of the FIG. 4 semiconductor wafer fragment at aprocessing step subsequent to that shown in FIG. 4.

FIG. 6 is a view of the FIG. 5 semiconductor wafer fragment at aprocessing step subsequent to that shown in FIG. 5.

FIG. 7 is a graph which depicts the current leakage characteristics of acapacitor manufactured in accordance with the teachings of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws "to promote the progressof science and useful arts" (Article 1, Section 8).

In accordance with one aspect of the invention, a method for forming acapacitor on a semiconductor substrate structure, includes:

providing a generally amorphous silicon layer on the semiconductorsubstrate structure;

providing a dielectric layer over the amorphous silicon layer; and

after providing the dielectric layer, providing conditions effective tocause the amorphous silicon layer to become substantiallypolycrystalline and electrically conductive.

Another aspect of the present invention relates to a method for forminga capacitor which includes:

providing a node location to which electrical connection to a capacitoris to be made;

providing an amorphous inner capacitor plate of a first material atopthe node location;

providing a capacitor dielectric layer outwardly of the first material;

after providing the capacitor dielectric layer, rendering the firstmaterial to be polycrystalline;

providing an electrically conductive outer capacitor plate layeroutwardly of the capacitor dielectric layer; and

providing the first material to be electrically conductive.

Still another aspect of the present invention relates to a method forforming a capacitor which includes:

providing a node location to which electrical connection to a capacitoris to be made;

providing an amorphous inner silicon capacitor plate atop the nodelocation, the inner silicon capacitor plate provided to a thickness ofless than about 400 Angstroms;

patterning and etching the inner silicon capacitor plate to apredetermined shape;

providing a dielectric layer atop the inner silicon capacitor plate, thedielectric layer provided to a thickness of not greater than about 60Angstroms;

after providing the capacitor dielectric layer, rendering the innersilicon capacitor plate to be polycrystalline;

providing an electrically conductive outer capacitor plate outwardly ofthe capacitor dielectric layer; and

providing the inner silicon capacitor plate to be electricallyconductive.

Yet another aspect of the present invention relates to a method forforming a capacitor on a semiconductor wafer structure, including:

providing an amorphous silicon first layer on the semiconductor waferstructure, the amorphous silicon first layer having a first degree ofelectrical conductivity;

providing a dielectric structure over the amorphous silicon first layer;

providing a conductive layer of material over the dielectric structure;

after providing the dielectric structure, providing conditions effectiveto cause the amorphous silicon first layer to become at least partiallypolycrystalline; and

providing conditions effective to cause the at least partiallypolycrystalline silicon first layer to have a second degree ofconductivity which is greater than the first degree of conductivity.

Yet, still a further aspect of the present invention relates to acapacitor which includes:

an inner electrically conductive capacitor plate;

an outer electrically conductive capacitor plate; and

a dielectric layer disposed intermediate the inner and outer capacitorplates; the inner and outer capacitor plates and the dielectric layerhaving current leakage characteristics which are substantiallysymmetrical with respect to both positive and negative voltage bias, thesymmetry characterized by the differences between the respectivepositive and negative voltage bias being within less than about 10% forbias voltages of less than or equal to about 5 volts.

Referring to FIG. 1, a semiconductor wafer fragment or structure inprocess is shown generally by the numeral 8. Such comprises a bulkmonocrystalline substrate 10 having an electrically conductive diffusionregion 11 provided therein. Region 11 constitutes a node location towhich electrical connection to an inner capacitor plate is to be made. Alayer of silicon dioxide 12 is provided atop the bulk substrate 10, anda contact opening 13 is provided through the layer of silicon dioxide 12to the underlying node 11. Further, a conductive plug 14 is provided inthe contact opening and is electrically coupled with the underlying node11.

Referring now to FIG. 2, a generally amorphous inner capacitor platelayer 20 of a first material, preferably amorphous silicon, is providedatop the silicon dioxide layer 12 to a preferred thickness of less thanabout 400 Angstroms. The inner capacitor plate layer 20 has an exteriorfacing surface 21. The inner capacitor plate layer 20 is preferablyprovided in a manner which provides, to the extent possible, anatomically smooth outer surface 21, in an effort to minimize undesiredcurrent leakage between the resultant capacitor plates. An example, andpreferred process for providing such an inner capacitor plate layer 20includes, providing the inner capacitor plate at a pressure of less thanabout 3 TORR, and a temperature of less than about 580 degrees C.Preferably, the inner capacitor plate is provided at a pressure of about200 mTORR; a temperature of about 535 degrees C.; and in a SiH₄ andPhosphine ambient. The absence of micrograins, as determined byemploying a transelectron microscope, provides evidence that anatomically smooth outer surface 21 has been achieved.

In providing the inner capacitor plate, it has been discovered that asthe temperature of deposition increases, the deposition rate alsoincreases. However, a corresponding decrease in the amorphous nature ofsubsequent inner capacitor plate deposit also simultaneously occurs. Onthe other hand, as pressure is increased, the rate of deposit alsoincreases. However, an increase in pressure also results in acorresponding increase in the amorphous nature of the inner capacitorplate deposit.

As noted above, an atomically smooth outer surface 21 may becharacterized by a number of techniques including the use of atomicforce microscopy, and in particular the use of root mean squaremeasurements; or surface area difference determinations. Still further,and as earlier described, the use of a transelectron microscope whichshows the presence or absence of micrograins in the resultant innercapacitor plate may also be employed. The presence of micrograinsevidences that an atomically smooth surface has not been achieved. Suchan atomically smooth surface as earlier noted, minimizes current leakagethrough the very thin capacitor dielectric plates, which are mostpreferably utilized in accordance with the most preferred aspects of thepresent invention.

Referring to FIG. 3, inner capacitor plate layer 20 is masked with asuitable masking material, such as photoresist, and patterned and etchedinto a desired resultant lower or inner capacitor plate shape. Themasking layer is then removed. All is preferably conducted in a mannerwhich does not adversely decrease the atomic smoothness of exteriorsurface 21, that is, making it rougher by such processing. Suchprocessing steps for example include the use of photoresist removaltechniques which minimize, to the extent possible, the oxidation of thecapacitor plate surface. Such might include, for example, performing thephotoresist removal at low temperatures, and reducing the ammoniahydroxide ratios in peroxide mixtures used in precleaning.

Referring now to FIG. 4, a dielectric layer, or dielectric structure 22is provided atop the inner capacitor plate 20. The dielectric layer 22is preferably provided to be very thin, for example, to a thickness ofnot greater than about 60 Angstroms. The dielectric layer 22 preferablycomprises a composite layer of silicon nitride and silicon dioxide. Inthe alternative, the dielectric structure may comprise a compositeoxide-nitride-oxide layer. More specifically, the silicon nitride layerpreferably has a thickness of not greater than about 50 Angstroms, andthe oxide layer has a thickness of about 4 Angstroms to about 10Angstroms. The silicon nitride layer can be provided by chemical vapordeposition by using dichlorosilane and ammonia as precursors. An exampleprocess utilizes a temperature of greater than about 600 degrees C. anda pressure of less than about 3 TORR. Most preferably, the chemicalvapor deposition occurs at a preferred temperature of about 680 degreesC. and a pressure of about 500 mTORR. The dielectric layer or structure22 is preferably provided by the above manner so as not to appreciablydecrease the atomic smoothness of the outer surface 21 during theprovision of the dielectric plate 22, nor substantially change the firstmaterial forming the inner capacitor plate 20 from the amorphous tocrystalline phase.

Referring now to FIG. 5, after providing the capacitor dielectric plate22, the method further comprises rendering the first material formingthe inner silicon capacitor plate 20 to be polycrystalline 24. Theamorphous silicon inner capacitor plate layer 20 can be converted to thepolycrystalline layer 24 by the application of heat. The heat isgraphically illustrated by the numeral 23. Rendering the inner capacitorplate layer 20 to be polycrystalline after provision of the dielectriclayer 22 is intended to substantially seal the atomic smoothness ofouter surface 21 in the resultant construction. For example, a dedicatedheat treatment to render the first material forming the inner capacitorplate 20 polycrystalline would include exposure of the semiconductorwafer 8 to temperatures of about 800 degrees C. for about 30 minutes inan oxidizing ambient. Alternatively, inherent subsequent semiconductorwafer processing can be utilized to subject the semiconductor wafer 8 toannealing conditions.

The first material forming the inner capacitor plate layer 20 may beelectrically conductive as initially provided, or initially provided asa semiconductive or electrically insulative material. For example, innercapacitor plate layer 20 can be in situ conductively doped during achemical vapor deposition process such that it is inherently conductiveupon its formation. Further where such first material is to be renderedelectrically conductive after its deposition, such ion implanting 27,for example, might be conducted either before or after rendering thefirst capacitor plate layer 20 to be polycrystalline. Still further, theinner capacitor plate layer 20 could be patterned before or after thephase change from amorphous to polycrystalline states. The preferredtechnique of addressing these and other variables would utilize aprocess flow which effectively results in the most atomically smoothouter surface 21 achievable. The preferred sequence of steps forfacilitating this objective is depositing the capacitor dielectric layer22 under the preferred conditions; providing the polycrystalline layer24 by utilizing a low temperature to inhibit recrystallization; and thenperforming an oxidizing anneal of the polycrystalline layer.

Referring to FIG. 6, an electrically conductive outer capacitor layer 25is ultimately provided outwardly of capacitor dielectric layer 22. Anexample and preferred material for layer 25 is conductively dopedpolysilicon.

The method of the present invention provides a capacitor which has aninner electrically conductive capacitor plate 20; an outer electricallyconductive capacitor plate 25; and a dielectric layer 22 disposedintermediate the inner and outer capacitor plates, the inner 20 andouter 24 capacitor plates and the dielectric layer 22 having currentleakage characteristics which are substantially symmetrical with respectto both positive and negative voltage bias, the voltage bias being lessthan about 10%. In particular, the differences between the respectivepositive and negative voltage biases are within about 10% of one anotherfor bias voltages of less than or equal to about 5 volts. This isgraphically depicted in FIG. 7. The line labeled "A" illustratespositive voltage bias, and line "B" illustrates negative voltage biasfor a specific reduction to practice capacitor manufactured inaccordance with the present invention. Such capacitor comprises a bottomcapacitor plate formed by in-situ doping with arsine and phosphine; atop capacitor plate formed by in situ doping with phosphine; and anintermediate substantially 50 Angstrom thick silicon nitride layer. Suchstructure was prepared using a wet oxidation anneal performed at 800degrees C. for 15 minutes duration.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described herein, since the meansdisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the Doctrine ofEquivalents.

I claim:
 1. A method for forming a capacitor on a semiconductorsubstrate structure, comprising:providing a generally amorphous siliconlayer on the semiconductor structure, the silicon layer having anoutermost surface; determining the atomic smoothness of the outermostsurface of the amorphous silicon layer, the absence of micrograinsindicating that an atomically smooth outermost surface has beenachieved; providing a dielectric layer over the amorphous silicon layer,and wherein the step of providing the dielectric layer does notsubstantially decrease the atomic smoothness of the outermost surface ofthe amorphous silicon layer nor substantially change the amorphoussilicon layer to a crystalline phase; after providing the dielectriclayer, providing conditions effective to cause the amorphous siliconlayer to become substantially polycrystalline and electricallyconductive.
 2. A method as claimed in claim 1, wherein the dielectriclayer is provided to a thickness of not greater than about 60 Angstroms.3. A method as claimed in claim 1, wherein the amorphous silicon layeris provided to a thickness of less than about 400 Angstroms.
 4. A methodas claimed in claim 1, wherein the amorphous silicon layer iselectrically conductive as initially provided.
 5. A method as claimed inclaim 1, wherein the amorphous silicon layer is not electricallyconductive as initially provided, the amorphous silicon layer renderedelectrically conductive, after the amorphous silicon layer is renderedpolycrystalline.
 6. A method as claimed in claim 1, wherein thedielectric layer consists essentially of a composite of silicon nitrideand oxide having a combined thickness of not greater than about 60Angstroms.
 7. A method as claimed in claim 1, wherein after providingthe amorphous silicon layer polycrystalline, and before rendering theamorphous silicon layer electrically conductive, providing anelectrically conductive layer of material over the dielectric layer, andwherein the amorphous silicon layer, and the electrically conductivelayer provide current leakage characteristics which are substantiallysymmetrical with respect to both positive and negative voltage bias. 8.A method as claimed in claim 7, wherein the substantial symmetry ischaracterized by differences between the respective positive andnegative voltage bias being within about 10% of one another for biasvoltages of less than or equal to about 5 volts.
 9. A method for forminga capacitor, comprising:providing a node location to which electricallyconnection to a capacitor is to be made; providing an amorphous innercapacitor plate layer of a first material atop the node location, theinner capacitor plate layer having an outermost surface; determining theatomic smoothness of the outermost surface of inner capacitor platelayer, the absence of micrograins on the outermost surface indicatingthat an atomically smooth outermost surface has been achieved; providinga capacitor dielectric layer outwardly of the first material, andwherein the step of providing the capacitor dielectric layer does notsubstantially decrease the atomic smoothness of the outermost surface ofthe inner capacitor plate layer nor substantially change the amorphousinner capacitor plate layer to a crystalline phase; after providing thecapacitor dielectric layer, rendering the first material to bepolycrystalline; providing an electrically conductive outer capacitorplate layer outwardly of the capacitor dielectric layer; and providingthe first material to be electrically conductive.
 10. A method forforming a capacitor as claimed in claim 9, wherein the capacitordielectric layer has a thickness of not greater than about 60 Angstroms.11. A method for forming a capacitor as claimed in claim 9, wherein thefirst material comprises silicon which is provided to a thickness ofless than about 400 Angstroms.
 12. A method for forming a capacitor asclaimed in claim 9, wherein the first material is electricallyconductive as initially provided.
 13. A method for forming a capacitoras claimed in claim 9, wherein the first material is not electricallyconductive as initially provided, the first material being provided tobe electrically conductive before rendering it polycrystalline.
 14. Amethod for forming a capacitor as claimed in claim 9, wherein thecapacitor dielectric layer comprises silicon nitride provided to athickness of not greater than about 60 Angstroms.
 15. A method forforming a capacitor as claimed in claim 9, wherein the capacitordielectric layer consists essentially of a composite of silicon nitrideand oxide having a combined thickness of not greater than about 60Angstroms.
 16. A method for forming a capacitor as claimed in claim 9,wherein the capacitor dielectric layer comprises a composite of siliconnitride and oxide, the silicon nitride having a thickness of not greaterthan about 50 Angstroms, and the oxide having a thickness of from about4 Angstroms to about 10 Angstroms.
 17. A method for forming a capacitoras claimed in claim 9, wherein the inner capacitor plate layer, thedielectric layer, and the upper capacitor plate layer provide capacitorcurrent leakage characteristics which are substantially symmetrical withrespect to both positive and negative voltage bias.
 18. A method forforming a capacitor as claimed in claim 17, wherein the substantialsymmetry is characterized by differences between the respective positiveand negative voltage bias being within about 10 percent of one anotherfor bias voltages of less than or equal to about 5 volts.
 19. A methodfor forming a capacitor on a semiconductive wafer structure,comprisingproviding an amorphous silicon first layer on thesemiconductor wafer structure, the amorphous silicon first layer havinga first degree of electrical conductivity and an outermost surface;determining the atomic smoothness of the outermost surface of theamorphous silicon first layer, the absence of micrograins on theoutermost surface indicating that an atomically smooth outermost surfacehas been achieved; providing a dielectric structure over the amorphoussilicon first layer, the step of providing the dielectric structurebeing conducted in a manner which does not substantially decrease theatomic smoothness of the outermost surface nor substantially changes theamorphous silicon first layer to a crystalline phase; providing aconductive layer of material over the dielectric structure; afterdeposition of the dielectric structure, providing conditions effectiveto cause the amorphous silicon first layer to become at least partiallypolycrystalline; and providing conditions effective to cause the atleast partially polycrystalline silicon first layer to have a seconddegree of conductivity which is greater than the first degree ofconductivity.
 20. A method as claimed in claim 19, wherein the amorphoussilicon first layer is caused to be at least partially polycrystallineafter providing the dielectric structure, and prior to providing theconductive layer of material.
 21. A method as claimed in claim 20,wherein the dielectric structure comprises a compositeoxide-nitride-oxide layer.
 22. A method as claimed in claim 20, whereinthe amorphous silicon first layer, dielectric structure, and theconductive layer of material provide current leakage characteristicswhich are substantially symmetrical with respect to both positive andnegative voltage bias, the respective, positive and negative voltagebias being within about 10% of one another for bias voltages of use thanor equal to about 5 volts.
 23. A method for forming a capacitor,comprising:providing a node location to which electrically connection toa capacitor is to be made; providing an amorphous inner siliconcapacitor plate atop the node location, the inner silicon capacitorplate provided to a thickness of less than about 400 Angstroms andhaving an outermost surface; patterning and etching the inner siliconcapacitor plate to a shape, the patterning and etching step beingconducted in a manner which does not substantially decrease the atomicsmoothness of the outermost surface; providing a dielectric layer atopthe patterned inner silicon capacitor plate, the dielectric layerprovided to a thickness of not greater than about 60 Angstroms, andwherein the step of providing the dielectric layer does notsubstantially decrease the atomic smoothness of the outermost surfacenor substantially change the inner silicon capacitor plate to acrystalline phase; after providing the capacitor dielectric layer,rendering the inner silicon capacitor plate to be polycrystalline;providing an electrically conductive outer capacitor plate outwardly ofthe capacitor dielectric layer; and providing the inner siliconcapacitor plate to be electrically conductive.
 24. A method for forminga capacitor as claimed in claim 23, wherein the inner silicon capacitorplate is electrically conductive as initially provided.
 25. A method forforming a capacitor as claimed in claim 23, wherein the inner siliconcapacitor plate is not electrically conductive as initially provided,the inner silicon capacitor plate provided to be electrically conductiveafter rendering it polycrystalline.
 26. A method for forming a capacitoras claimed in claim 23, wherein the inner silicon capacitor plate is notelectrically conductive as initially provided, the inner siliconcapacitor plate being provided to be electrically conductive beforerendering it polycrystalline.
 27. A method for forming a capacitor asclaimed in claim 23, wherein the capacitor dielectric layer comprisessilicon nitride.
 28. A method for forming a capacitor as claimed inclaim 23, wherein the capacitor dielectric layer consists essentially ofa composite of silicon nitride and oxide.
 29. A method for forming acapacitor as claimed in claim 23, wherein the capacitor dielectric layercomprises a composite of silicon nitride and oxide, the silicon nitridehaving a thickness of not greater than about 50 Angstroms, and the oxidehaving a thickness of from about 4 Angstroms to about 10 Angstroms. 30.A method for forming a capacitor as claimed in claim 23, wherein theinner capacitor plate, the dielectric layer, and the upper capacitorplate provide capacitor current leakage characteristics which aresubstantially symmetrical with respect to both positive and negativevoltage bias.
 31. A method for forming a capacitor as claimed in claim30, wherein the substantial symmetry is characterized by differencesbetween the respective positive and negative voltage bias being withinabout 10 percent of one another for bias voltages of less than or equalto about 5 volts.
 32. A method for forming a capacitor,comprising:providing a node location to which electrical connection to acapacitor is to be made; providing on amorphous silicon inner capacitorplate atop the node location, the amorphous inner capacitor plate beingprovided to have an atomically smooth outermost surface; determining theatomic smoothness of the outermost surface of the amorphous siliconinner capacitor plate, the absence of micrograins on the outermostsurface indicating that an atomically smooth outermost surface has beenachieved; etching the amorphous silicon inner capacitor plate into ashape, the etching step being conducted in a manner which does notsubstantially decrease the atomic smoothness of the outermost surface;providing a capacitor dielectric layer over the atomically smoothoutermost surface in a manner which substantially seals the outermostsurface, and wherein the step of providing the capacitor dielectriclayer does not substantially decrease the atomic smoothness of the outersurface nor substantially change the amorphous silicon inner capacitorplate to a crystalline phase; after providing the capacitor dielectriclayer over the atomically smooth surface, rendering the silicon innercapacitor plate to be polycrystalline; providing an electricallyconductive outer capacitor plate outwardly of the capacitor dielectriclayer; and providing the silicon inner capacitor plate to beelectrically conductive, and wherein the inner and outer capacitorplates have current leakage characteristics which are substantiallysymmetrical with respect to both positive and negative voltage biaswhich is less than about 10%.
 33. A method for forming a capacitor asclaimed in claim 32; wherein the dielectric layer comprises a compositeof silicon nitride which is provide to a thickness of not greater thanabout 50 Angstroms, and an oxide layer provided to a thickness of notgreater than about 10 Angstroms.
 34. A method for forming a capacitor asclaimed in claim 32, wherein the inner capacitor plate has a thicknessof less than about 400 Angstroms.